Characterization of ion-implantation doping of strained-layer superlattices. II. Optical and electrical properties

Journal Article · Sat Nov 15 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337796· OSTI ID:5190698

Myers, D R; Biefeld, R M; Gourley, P L; Wiczer, J J; Zipperian, T E; Fritz, I J; Barnes, C E; Osbourn, G C

We have investigated the properties of Ga(AsP)/GaP strained-layer superlattices (SLSs) that have been doped by implantation of 1 x 10/sup 15//cm/sup 2/, 75 keV Be/sup +/ followed by controlled-atmosphere annealing at 825 /sup 0/C for 10 min. Our results indicate that doping of these strained-layer superlattices without disordering is a viable process. Liquid-helium temperature photoluminescence suggests a binding energy for the implanted acceptors of 50 meV, consistent with that of beryllium in GaP-based alloys. The implantation-doped regions exhibit room-temperature electrical activation of 15% and hole mobilities of 20 cm/sup 2//V s, consistent with the values expected for type-converted GaP-based alloys. SLS diodes fabricated by this process exhibit excellent rectification properties, with a forward turn-on voltage of approximately 1.8 V and low values of room-temperature reverse leakage current densities. Diodes formed from SLSs with original n-type doping of 1 x 10/sup 17//cm/sup 3/ have typical reverse leakage current densities of 1 x 10/sup -7/ A/cm/sup 2/ at -10 V, despite the depletion region penetrating approximately ten interfaces of the SLS at this bias. Deep-level transient spectroscopy demonstrates the existence of defect centers, whose densities and signatures are similar to those found in ion-implanted GaP. The implanted photodiodes exhibit a wavelength-dependent photoresponse characteristic of grown-junction SLS photodetectors in the same chemical system.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87111
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5190698
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CURRENTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
ION IMPLANTATION
LEAKAGE CURRENT
LUMINESCENCE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
SUPERLATTICES