Stress release in ion implanted lattice mismatched semiconductor heterostructures

Conference · Tue Dec 31 23:00:00 EST 1985

OSTI ID:6922752

Arnold, G W; Picraux, S T; Myers, D R; Doyle, B L; Peercy, P S; Biefeld, R M; Dawson, L R

Cantilever-beam measurements of ion-implantation induced stress in (InGa)As/GaAs, Ga(AsP)/GaP, and Ga(AsP)/GaAs strained layer superlattices (SLSs), grown either by molecular-beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD), have shown that a mechanism for precipitous stress-relief can be operative for room-temperature damage-energy deposition values above approx. 2 x 10/sup 20/ keV/cm/sup 3/. This phenomenon is correlated with the initial residual compressive stress on the composite structure and is determined by the differences in lattice parameter between the substrate and the buffer alloy-layer.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6922752
• Report Number(s): SAND-86-1821C; CONF-861207-41; ON: DE87004518
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION BEAMS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
KRYPTON IONS
LAYERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
RESIDUAL STRESSES
SILICON IONS
STRAINS
STRESS RELAXATION
STRESSES
SUPERLATTICES