Ion implantation disorder in strained-layer superlattices
Cantilever-beam bending and RBS channeling measurements have been used to examine implantation-induced disorder and stress buildup in In/sub 0/ /sub 2/Ga/sub 0/ /sub 8/As/GaAs SLS structures. Implantation fluences from 10/sup 11/ to 10/sup 15//cm/sup 2/ were used for 150-keV Si, 320-keV Kr, and 250-keV Zn in SLS and GaAs bulk materials. The critical fluence for saturation of compressive stress occurs prior to amorphous layer formation and is followed by stress relief. For all the ions the maximum ion-induced stress scales with energy density into atomic processes and stress relief occurs above approx. 1 x 10/sup 20/ keV/cm/sup 3/. Stress relief is more pronounced for the SLSs than for bulk GaAs. We suggest that stress-relief may lead to slip or other forms of inelastic material flow in SLSs, which would be undesirable for active regions in device applications. Such material flow may be avoided by limiting maximum fluences or by multiple step or simultaneous implantation and annealing for high fluences.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6243428
- Report Number(s):
- SAND-84-0478C; CONF-841157-38; ON: DE85004466
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of ion-implantation doping of strained-layer superlattices. I. Structural properties
Evaluation of implantation-disordering of (InGa)As/GaAs strained-layer superlattices
Related Subjects
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELASTIC SCATTERING
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
KRYPTON IONS
PNICTIDES
RELAXATION
RUTHERFORD SCATTERING
SCATTERING
SILICON IONS
STRESS RELAXATION
SUPERLATTICES
ZINC IONS