Structural integrity of ion-implanted In/sub 0. 2/Ga/sub 0. 8/As/GaAs strained-layer superlattice
The strain and lattice disorder introduced by room temperature implantation (N, Si, Zn) into strained-layer superlattices (SLS) of In/sub 0.2/Ga/sub 0.8/As/ GaAs have been measured by cantilever-beam techniques and by channeled and random Rutherford backscattering spectrometry. These measurements indicate that a maximum lateral compressive stress of approx.5 x 10/sup 9/ dyn/cm/sup 2/ is induced for all the ions at fluences corresponding to deposited energy densities of about 10/sup 20/ keV/cm/sup 3/ into collisional processes. The compositional modulation of the SLS is maintained at fluences which exceed the yield stress value even in the presence of additional implantation-induced stress and significant numbers of atomic displacements.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6881004
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
COMPRESSION
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION CHANNELING
ION IMPLANTATION
IONS
LATTICE PARAMETERS
MICROSTRUCTURE
NITROGEN IONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCATTERING
SILICON IONS
STRAINS
STRESSES
SUPERLATTICES
ZINC IONS