Ion implanted lateral in /sub 2/Ga /sub 8/As/GaAs strained-layer superlattice photodetector

Conference · Sat Dec 31 23:00:00 EST 1983

OSTI ID:6416210

Bulman, G E; Myers, D R; Wiczer, J J; Dawson, L R; Biefeld, R M; Zipperian, T E

A Be/sup +/ implanted lateral In /sub 2/Ga /sub 8/As/GaAs SLS photodetector has been fabricated. The devices exhibit good reverse bias characteristics with dark current of less than 6nA at -60 V. Quantum efficiency measurements indicate an uncoated external value of 50% at 20V. Position resolved photocurrent measurements show that carrier collection occurs over a large area (100 ..mu..m x 250 ..mu..m at -50V) with capacitance values less than 1 pF. This is the first demonstration of a photodetector which utilizes the preferred direction of conduction that occurs in superlattice structures.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6416210
• Report Number(s): SAND-84-1581C; CONF-841234-2; ON: DE85001365
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM IONS
CAPACITANCE
CHARGED PARTICLES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
IONS
PHOTOCURRENTS
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
STRAINS
SUPERLATTICES