Proton isolated In/sub 0. 2/Ga/sub 0. 8/As/GaAs strained-layer superlattice avalanche photodiode

Journal Article · Sun Apr 13 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96621· OSTI ID:6021541

Bulman, G E; Myers, D R; Zipperian, T E; Dawson, L R

We have fabricated the first proton isolated strained-layer superlattice (SLS) avalanche photodiode. The grown In/sub 0.2/Ga/sub 0.8/As/GaAs p/sup +/n SLS structure was bombarded outside the active region with 220 keV protons to a total dose of 1 x 10/sup 15/cm/sup -2/. These first nonoptimized devices exhibit a breakdown voltage of 23.5 V with a dark current density of 1.3 x 10/sup -3/A/cm/sup 2/ at 90% of the breakdown voltage. The isolation is stable under annealing for 10 min at 350 /sup 0/C. Uniform photoresponse is observed across the active region with two order of magnitude reduction in response occurring in the isolation region. A peak uncoated external quantum efficiency of 25% at 910 nm is observed with 10 V reverse bias and photocurrent multiplication is observed at higher bias values. These results demonstrate that proton isolation can be successfully applied to strained-layer systems and can be incorporated in useful device structures.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6021541
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMPLIFICATION
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BREAKDOWN
CURRENTS
DATA
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES