Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

Jeong, Hoon; Cho, Minkyu; Xu, Zhiyu; Mehnke, Frank; Otte, Nepomuk; Shen, Shyh-Chiang; Detchprohm, Theeradetch; Dupuis, Russell D.

doi:10.1063/5.0161953

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

Journal Article · Mon Sep 18 00:00:00 EDT 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0161953· OSTI ID:2420976

^[1]; Cho, Minkyu; ; ; ; ; ;

OSTI

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0019133

OSTI ID:: 2420976

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 123; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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