Impact ionization coefficients for electrons and holes in In$sub 0$$.$$sub 14$Ga$sub 0$$.$$sub 86$As

Journal Article · Mon Sep 15 04:00:00 EDT 1975 · Appl. Phys. Lett., v. 27, no. 6, pp. 330-332

OSTI ID:4142595

Pearsall, T P; Nahory, R E; Pollack, M A

We report the measurement of impact ionization rates for electrons and holes in the direct band-gap semiconductor alloy In$sub 0$$.$$sub 14$Ga$sub 0$$.$$sub 86$As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6times10$sup 5$ and 3.4times10$sup 5$ V cm$sup -1$. In this range, the ionization coefficients can be expressed as $alpha$$=$$alpha$/sub infinity/ exp(-A/ E) for electrons and $beta$$=$$beta$/sub infinity/ exp(-B/E) for holes with $alpha$/ sub infinity/=1.0times10$sup 9$ cm$sup -1$, A=3.6times10$sup 6$ V cm$sup -1$, and $beta$/sub infinity/=1.3times10$sup 8$ cm$sup -1$, B=2.7times10$sup 6$ V cm$sup - 1$.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• NSA Number: NSA-33-001125
• OSTI ID: 4142595
• Journal Information: Appl. Phys. Lett., v. 27, no. 6, pp. 330-332, Journal Name: Appl. Phys. Lett., v. 27, no. 6, pp. 330-332; ISSN APPLA
• Country of Publication: United States
• Language: English

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*GALLIUM ARSENIDES-- IONIZATION
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ELECTRONS
HOLES
N50130* --Metals
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& Other Materials--Ceramics & Cermets--Properties
Structure & Phase Studies
SEMICONDUCTOR JUNCTIONS