On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
All published results of measurements (at 300 K) of the impact ionization coefficients for electrons α{sub n} and holes α{sub p} in 4H–SiC are analyzed. It is shown that the most plausible approximations of dependences of α{sub n,} {sub p} on electric-field strength E have the usual form α{sub n,} {sub p} = a{sub n,p} exp(–E{sub n,} {sub p}/E) at fitting-parameter values of a{sub n} = 38.6 × 106 cm{sup –1}, E{sub n} = 25.6 MV/cm, a{sub p} = 5.31 × 106 cm{sup –1}, and E{sub p} = 13.1 MV/cm. These dependences α{sub n,} {sub p}(E) are used to calculate the highest field strength E{sub b} and thickness w{sub b} of the space-charge region at the breakdown voltage U{sub b}. A number of new formulas for calculating α{sub n,} {sub p}(E) are obtained from the results of measuring the avalanche-multiplication coefficients and the excess-noise factors under the single-sided illumination of photodiodes with stepped doping.
- OSTI ID:
- 22645604
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 50; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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