Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Ji, Dong; Ercan, Burcu; Chowdhury, Srabanti

doi:10.1063/1.5099245

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Journal Article · Tue Aug 13 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5099245· OSTI ID:1557029

; Ercan, Burcu; Chowdhury, Srabanti

In this study, we experimentally determined the impact ionization coefficients of GaN using homoepitaxially grown p-n diodes with avalanche capability. The extracted hole impact ionization coefficient is obtained as β(E) = 4.39 × 106 exp (−1.8 × 107/E) cm−1, and the electron impact ionization coefficient is obtained as α(E) = 2.11 × 109 exp (−3.689 × 107/E) cm−1. This study also presents the temperature dependence of impact ionization coefficients in GaN. The results presented in this experimental study are an important contribution to the database on the material properties of GaN, which will enable more accurate prediction of the avalanche in GaN devices.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1557029

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (14)

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements Muth, J. F.; Lee, J. H.; Shmagin, I. K. Applied Physics Letters, Vol. 71, Issue 18 https://doi.org/10.1063/1.120191	journal	November 1997
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN Oğuzman, Ismail H.; Bellotti, Enrico; Brennan, Kevin F. Journal of Applied Physics, Vol. 81, Issue 12 https://doi.org/10.1063/1.365392	journal	June 1997
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Cao, Lina; Wang, Jingshan; Harden, Galen Applied Physics Letters, Vol. 112, Issue 26 https://doi.org/10.1063/1.5031785	journal	June 2018
Activation of buried p-GaN in MOCVD-regrown vertical structures Li, Wenshen; Nomoto, Kazuki; Lee, Kevin Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5041879	journal	August 2018
Gallium nitride devices for power electronic applications Baliga, B. Jayant Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074011	journal	June 2013
Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm ⁻¹ Mandal, S.; Kanathila, M. B.; Pynn, C. D. Semiconductor Science and Technology, Vol. 33, Issue 6 https://doi.org/10.1088/1361-6641/aab73d	journal	May 2018
Power semiconductor device figure of merit for high-frequency applications Baliga, B. J. IEEE Electron Device Letters, Vol. 10, Issue 10 https://doi.org/10.1109/55.43098	journal	October 1989
Experimental evaluation of impact ionization coefficients in GaN Kunihiro, K.; Kasahara, K.; Takahashi, Y. IEEE Electron Device Letters, Vol. 20, Issue 12 https://doi.org/10.1109/55.806100	journal	December 1999
New Unipolar Switching Power Device Figures of Merit Huang, A. Q. IEEE Electron Device Letters, Vol. 25, Issue 5 https://doi.org/10.1109/LED.2004.826533	journal	May 2004
Impact Ionization Coefficients in 4H-SiC Loh, W. S.; Ng, B. K.; Ng, J. S. IEEE Transactions on Electron Devices, Vol. 55, Issue 8 https://doi.org/10.1109/TED.2008.926679	journal	August 2008
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu IEEE Transactions on Electron Devices, Vol. 62, Issue 10 https://doi.org/10.1109/TED.2015.2466445	journal	October 2015
Review of Silicon Carbide Power Devices and Their Applications She, Xu; Huang, Alex Q.; Lucia, Oscar IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10 https://doi.org/10.1109/TIE.2017.2652401	journal	October 2017
Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures Narita, Tetsuo; Tomita, Kazuyoshi; Yamada, Shinji Applied Physics Express, Vol. 12, Issue 1 https://doi.org/10.7567/1882-0786/aaf418	journal	December 2018

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