Study of SEUs generated by high energy ions
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6598109
- Univ.-GH-Siegen (Germany)
- ESA-ESTEC, Noordwijk (Netherlands)
- Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)
Using 1 GeV/nucleon ions SEUs have been studied in two types of CMOS-SRAMs with respect to tilt angle and tilt direction. Tracks of upset bits, which have been observed under large tilt angles, were used to determine the charge collection depth in these devices.
- OSTI ID:
- 6598109
- Report Number(s):
- CONF-930953--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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