Ion induced charge collection and SEU sensitivity of emitter coupled logic (ECL) devices

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488785· OSTI ID:203703

Koga, R; Crain, W R; Hansel, S J; Crawford, K B; Kirshman, J F; Pinkerton, S D; Penzin, S H; Moss, S C ^[1]; Maher, M ^[2]

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1. Aerospace Corp., El Segundo, CA (United States)
2. National Semiconductor, South Portland, ME (United States)

This paper presents single event upset (SEU) and latchup test results for selected Emitter Coupled Logic (ECL) microcircuits, including several types of low capacity SRAMs and other memory devices. The high speed of ECL memory devices makes them attractive for use in space applications. However, the emitter coupled transistor design increases susceptibility to radiation induced functional errors, especially SEU, because the transistors are not saturated, unlike the transistors in a CMOS device. Charge collection at the sensitive nodes in ECL memory elements differs accordingly. These differences are responsible, in part, for the heightened SEU vulnerability of ECL memory devices relative to their CMOS counterparts.

• OSTI ID: 203703
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
LOGIC CIRCUITS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES
SPACE FLIGHT