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Relationship between IBICC imaging and SEU in CMOS ICs

Conference ·
OSTI ID:10146762
; ;  [1]; ; ; ;  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Melbourne Univ., Parkville, VIC (Australia)
+ Show Author Affiliations
Ion-beam-induced charge-collection (IBICC) images of the TA670 16K-bit CMOS SRAM are analyzed and compared to previous SEU images. Enhanced charge collection was observed in the n-source/drains regions consistent with bipolar amplification or shunting.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
10146762
Report Number(s):
SAND--93-0595C; CONF-930704--8; ON: DE93009854
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426000
CHARGE COLLECTION
COMPARATIVE EVALUATIONS
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
IMAGE PROCESSING
INTEGRATED CIRCUITS
ION BEAMS
MOS TRANSISTORS
PREAMPLIFIERS