Relationship between IBICC imaging and SEU in CMOS ICs

Conference · Wed Dec 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.273478· OSTI ID:6953145

Sexton, F W; Horn, K M; Doyle, B L ^[1]; Laird, J S; Cholewa, M; Saint, A; Legge, G J.F. ^[2]

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1. Sandia National Lab., Albuquerque, NM (United States)
2. Univ. of Melbourne, Parkville, Victoria (Australia). Micro Analytical Research Centre

Ion-beam-induced charge-collection imaging (IBICC) has been used to study the SEU mechanisms of the Sandia TA670 16K-bit SRAM. Quantitative charge-collection spectra from known regions of the memory cell have been derived with this technique. For 2.4-MeV He ions at normal incidence, charge collection depth for a reverse-biased p+ drain strike is estimated to be 4.8[+-]0.4 [mu]m. Heavy-ion strikes to the reverse-biased p-well result in nearly complete collection of deposited charge to a depth of 5.5[+-]0.5 [mu]m. A charge amplification effect in the n-on drain is identified and is due to either bipolar amplification or a shunt effect in the parasitic vertical npn bipolar transistor associated with the n+/n substrate, p-well, and n+ drain. This effect is present only when the n+ drain is at 0V bias. When coupled with previous SEU-imaging, these results strongly suggest that the dominant SEU mechanism in this SRAM is a heavy-ion strike to the n-on transistor drain.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6953145
• Report Number(s): CONF-930704--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
DATA
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
HELIUM IONS
INFORMATION
INTEGRATED CIRCUITS
IONIZING RADIATIONS
IONS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS