Location of deuterium on the silicon (100) monohydride surface determined by transmission-ion channeling
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States)
The location of deuterium (D) in the monohydride configuration on the silicon (100) surface is established using transmission-ion channeling. A 2-MeV [sup 4]He[sup +] ion beam was used to elastically recoil D from the beam-exit surface of a thin silicon crystal. The yield of recoiled D was measured versus angle about the [l angle]100[r angle], [l angle]110[r angle], and [l angle]111[r angle] axes. The location of the surface D relative to the silicon lattice was determined by comparing the measured yields with computer-channeling simulations. The observed location is consistent with a Si-D bond length of 1.6[plus minus]0.2 A along the silicon tetrahedral bond direction in agreement with recent [ital ab] [ital initio] theoretical calculations.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6586014
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 51:8; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
BOND LENGTHS
CHANNELING
CHARGED PARTICLES
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DESORPTION
DEUTERIUM
DIMENSIONS
ELEMENTS
EPITAXY
HELIUM IONS
HYDROGEN ISOTOPES
ION CHANNELING
IONS
ISOTOPES
LENGTH
LIGHT NUCLEI
NUCLEI
ODD-ODD NUCLEI
SEMIMETALS
SEPARATION PROCESSES
SILICON
SORPTION
SORPTIVE PROPERTIES
STABLE ISOTOPES
SURFACE PROPERTIES