Transmission-ion-channeling studies of the silicon (111) monohydride surface
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Transmission ion channeling was used to examine the atomic position of deuterium on the silicon (111) monohydride surface. A 2-MeV {sup 4}He{sup +}-ion beam was used to elastically recoil deuterium from the beam-exit surface of a thin silicon crystal. The yield of recoiled deuterium was measured versus angle between the analysis beam and the channeling axis near the {l_angle}111{r_angle}, {l_angle}110{r_angle}, and {l_angle}100{r_angle} axes. The location of the surface deuterium relative to the silicon lattice was examined by comparing the measured yields with computer simulations of ion channeling. Channeling measurements were consistent with approximately half of the deuterium occupying a site close to the site predicted by {ital ab initio} calculations of the structure for the Si(111) 1{times}1 monohydride surface, with the remaining deuterium being disordered or displaced from the predicted site. {copyright} {ital 1997} {ital The American Physical Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 560704
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 15 Vol. 55; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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