Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy

Journal Article · Mon Apr 30 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103099· OSTI ID:6904293

Yu, K M ^[1]; Lee, H P; Wang, S ^[2]

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1. Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, CA (USA) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA (USA)
2. Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA (USA)

We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of {approx}2{times}10{sup 14} atoms/cm{sup 2} of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within {approx}20 A of the surface of the GaAs. Angular scans of the Ga {ital K}{sub {alpha}}, As {ital K}{sub {beta}}, and Sn {ital L} x rays across the {l angle}100{r angle}, {l angle}110{r angle}, and {l angle}111{r angle} axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 A from the substitutional sites was detected.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6904293
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CARRIER DENSITY
CHANNELING
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
MOLECULAR BEAM EPITAXY
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
TIN ADDITIONS
TIN ALLOYS