Selectively dry-etched n sup + -GaAs/N-InAlAs/InGaAs HEMT's for LSI

Journal Article · Tue May 01 00:00:00 EDT 1990 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/55.55259· OSTI ID:6584590

Kuroda, S; Harada, N; Mimura, T; Abe, M ^[1]; Sasa, S ^[2]

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1. Lab. Ltd., 10-1 Morinosato-Wakamiya, Atsugi 242-01 Fujitsu (JP)
2. California Univ., Santa Barbara, CA (USA)

High-speed N-InAlAs/InGaAs HEMT large-scale integrated circuits must have uniform device parameters. The authors demonstrate a new selectively dry-etched n{sup +}-GaAs/N-InAlAs/InGaAs HEMT which has a very uniform threshold voltage. Despite the high dislocation density at the n{sup +}-GaAs layer, its performance is excellent. For a gate length of 0.92 {mu}m, the maximum transconductance of the HEMT is 390 mS/mm. The measured current-gain cutoff frequency {ital f{sub t}} is 23.7 GHz, and the maximum frequency of oscillation {ital f}{sub max} is 75.0 GHz. The standard deviation of the threshold voltage across a 2-in wafer is as low as 13 mV.

• OSTI ID: 6584590
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 11:5; ISSN EDLED; ISSN 0741-3106
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
DISLOCATION PINNING
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
ETCHING
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTEGRATED CIRCUITS
JUNCTIONS
LAYERS
MICROELECTRONIC CIRCUITS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
THRESHOLD CURRENT