InP/InAlAs/InGaAs-quantum wires
Conference
·
OSTI ID:536309
- Technische Univ., Berlin (Germany)
- Siemens AG, Muenchen (Germany)
Single InGaAs quantum wires and stacked InGaAs quantum wires with InAlAs barriers have been fabricated on v-grooved InP substrates by low pressure metal-organic chemical vapor deposition. The authors have found growth conditions where the InAlAs barrier exhibits a resharpening effect, similar to that of AlgaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven.
- Sponsoring Organization:
- Deutsche Forschungsgemeinschaft, Bonn (Germany)
- OSTI ID:
- 536309
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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