Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

Journal Article · Sun Jan 10 23:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939439· OSTI ID:22489280

Li, S.; Zhou, X.; Li, M.; Kong, X.; Mi, J.; Wang, M.; Wang, W.

Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.

• OSTI ID: 22489280
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASPECT RATIO
CHEMICAL VAPOR DEPOSITION
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MONOCRYSTALS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING