Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates
- Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland)
- L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)
- Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland)
InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.
- OSTI ID:
- 22494773
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
Related Subjects
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DIFFUSION
EFFECTIVE MASS
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GERMANIUM
INDIUM
INDIUM ARSENIDES
LATTICE PARAMETERS
MORPHOLOGY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
SILICON
SPECTROSCOPY
STRAINS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION