Influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs
- Univ. of Washington, Seattle, WA (United States)
The influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs, has been studied. Photoluminescence (PL) spectra obtained from GaAs/InGaAs single quantum well structures show strong dependence on InGaAs growth temperature. As the growth temperature increases, PL peaks shift to a higher energy, which is attributed to reevaporation of indium from the InGaAs layer during the growth at higher substrate temperatures. An activation energy of 3.1 {plus_minus}0.2 eV for indium desorption from the (111)B GaAs substrate was obtained. InGaAs layers grown below 530{degrees}C, where reflection high-energy electron diffraction shows (2x2) reconstruction, exhibit a wider Pl linewidth than those grown above 530 {degrees}C. The optimum temperature for growth of InGAAS on (111)B GaAs substrates is the lowest possible temperature where one can maintain a ({radical}19X{radical}19)R23.4 reconstruction; this varies with the group V/III beam equivalent pressure ratio. 11 refs., 3 figs., 2 tabs.
- OSTI ID:
- 146997
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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