Surface morphology and quality of strained InGaAs grown by molecular-beam epitaxy on GaAs

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586801· OSTI ID:146999

Yoon, Soon Fatt ^[1]

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1. Nanyang Technological Univ. (Singapore)

InGaAs layers of varying epilayer thickness grown at different temperatures on GaAs substrates by molecular-beam epitaxy are analyzed by atomic force microscopy. The surface roughness and morphology of InGaAs grown at substrate temperatures ranging from 450 to 530{degrees}C are analyzed as the epilayer thickness is increased from 100 to 800 {angstrom}. Over an area of 100 {mu}m{sup 2}, an abrupt increase in the surface roughness probably indicates an acceleration of surface roughening mechanisms related to the process of strain relaxation. At higher InGaAs thicknesses, surface corrugations were observed. The results indicate that thicker pseudomorphic InGaAs films on Ga As substrates can be grown at lower temperatures. Raman spectroscopy data of strain-induced shifts in the GaAs-like mode longitudinal optic phonon indicates that the GaAs has tensile strain along the interface. The strain calculated form the observed frequency shift agrees with the lattice-mismatch st5rain given by the elasticity theory. 18 refs., 5 refs.

• OSTI ID: 146999
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELASTICITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
RAMAN SPECTROSCOPY
ROUGHNESS