Growth condition dependence of RHEED pattern from GaAs(111)B surface

Conference · Tue Jan 01 04:00:00 EST 1991

DOI:https://doi.org/10.1557/PROC-228-261· OSTI ID:5742513

Yang, K; Li, W; Taylor, A P; Schowalter, L J ^[1]; Xiao, Q F ^[2]; Laurich, B K; Smith, D L ^[3]

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1. Rensselaer Polytechnic Inst., Troy, NY (USA)
2. State Univ. of New York, Albany, NY (USA). Dept. of Physics
3. Los Alamos National Lab., NM (USA)

A 3-dimensional phase diagram is introduced to describe the dependence of the RHEED pattern from GaAS (111)B surface on growth conditions. The 2 {times} 2, transitional (1 {times} 1), and {radical}19 {times} {radical}19 surface reconstructions correspond to different zones in the phase diagram. A equation is given for the planes that separate these zones, which fit experimental data well. Homoepitaxial films on GaAs(111)B grown in the 2 {times} 2 region generally have bad crystal quality as determined by the ion channeling, and growth in the {radical}19 {radical}19 region generally yields rough surface morphology. At higher substrate temperatures ({approximately} 650{degrees}C), featureless films with minimum ion channeling yields of less than 4% are achieved. 13 refs., 6 figs.

• Research Organization: Los Alamos National Lab., NM (USA)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 5742513
• Report Number(s): LA-UR-91-1919; CONF-910406--24; ON: DE91014770
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIAGRAMS
DIFFRACTION
ELECTRON DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PHASE DIAGRAMS
PNICTIDES
SCATTERING
SUBSTRATES