Molecular-beam epitaxy on exact and vicinal GaAs({ovr 111}) substrates

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586787· OSTI ID:147011

Yang, K; Schowalter, L J ^[1]; Laurich, B K ^[2]

---

1. Rensselaer Polytechnic Inst., Troy, NY (United States)
2. Los Alamos National Lab., NM (United States)

GaAs films grown on exact ({ovr 111}) substrates in the {radical}19 X {radical}19 reconstruction regime always show facets. The facets are composed of vicinal surfaces which are inclined by small angles ({approximately}2{degrees}) from the exact ({ovr 111}) plane. The comparison between surface morphologies of films grown on vicinal substrates tilted toward different directions shows that the most stable steps run along the {l_angle}110{r_angle} directions and step downward toward the [11{bar 2}],[{bar 2}11], and [1{bar 2}1] directions. In the {radical}19 X {radical}19-surface-reconstruction growth regime, smooth films can be grown only on substrates tilted toward the [2{bar 1}{bar 1}] direction. This result suggests that a vicinal surface, which is tilted toward the [21{bar 1}] direction, may have less surface-free energy than the exact ({ovr 111}) surface. Characterization of superlattices grown on vicinal GaAs({ovr 111}) substrates, tilted 3{degrees} toward the [2{ovr 11}] direction, are also presented. 11 refs., 6 figs.

• OSTI ID: 147011
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FREE ENERGY
GALLIUM ARSENIDES
MICROSCOPY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SUPERLATTICES