Molecular-beam epitaxy on exact and vicinal GaAs({ovr 111}) substrates
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Los Alamos National Lab., NM (United States)
GaAs films grown on exact ({ovr 111}) substrates in the {radical}19 X {radical}19 reconstruction regime always show facets. The facets are composed of vicinal surfaces which are inclined by small angles ({approximately}2{degrees}) from the exact ({ovr 111}) plane. The comparison between surface morphologies of films grown on vicinal substrates tilted toward different directions shows that the most stable steps run along the {l_angle}110{r_angle} directions and step downward toward the [11{bar 2}],[{bar 2}11], and [1{bar 2}1] directions. In the {radical}19 X {radical}19-surface-reconstruction growth regime, smooth films can be grown only on substrates tilted toward the [2{bar 1}{bar 1}] direction. This result suggests that a vicinal surface, which is tilted toward the [21{bar 1}] direction, may have less surface-free energy than the exact ({ovr 111}) surface. Characterization of superlattices grown on vicinal GaAs({ovr 111}) substrates, tilted 3{degrees} toward the [2{ovr 11}] direction, are also presented. 11 refs., 6 figs.
- OSTI ID:
- 147011
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0018
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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