Diffusion length of Ga adatoms on GaAs ([bar 1][bar 1][bar 1]) surface in the [radical]19 [times][radical]19 reconstruction growth regime
- Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Faceted surface morphologies of homoepitaxial films grown on exactly ([bar 1][bar 1][bar 1])-oriented GaAs substrates in the [radical]19 [times][radical]19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2[degree] toward [2[bar 1][bar 1]], [[bar 1]2[bar 1]], and [[bar 1][bar 1]2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs ([bar 1][bar 1][bar 1]) film is unlikely caused by slower surface mobility.
- OSTI ID:
- 5149684
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:13; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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