Diffusion length of Ga adatoms on GaAs ([bar 1][bar 1][bar 1]) surface in the [radical]19 [times][radical]19 reconstruction growth regime

Journal Article · Mon Mar 28 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111817· OSTI ID:5149684

Yang, K; Schowalter, L J ^[1]; Thundat, T ^[2]

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1. Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Faceted surface morphologies of homoepitaxial films grown on exactly ([bar 1][bar 1][bar 1])-oriented GaAs substrates in the [radical]19 [times][radical]19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2[degree] toward [2[bar 1][bar 1]], [[bar 1]2[bar 1]], and [[bar 1][bar 1]2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs ([bar 1][bar 1][bar 1]) film is unlikely caused by slower surface mobility.

• OSTI ID: 5149684
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:13; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
DIFFUSION LENGTH
DIMENSIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LENGTH
PNICTIDES
SURFACE PROPERTIES
THIN FILMS