Fabrication of InGaAs quantum wires with composition-controlled barrier layers by selective growth of molecular beam epitaxy
- Electrotechnical Lab., Tsukuba (Japan)
Semiconductor quantum wires, in which carriers are confined to one dimension, have been extensively studied for the investigation of their physical properties, and also for the application to novel optoelectronic devices. InGaAs quantum wire structures with composition-controlled InAlAs barrier layer have been fabricated on non-planer substrates by molecular beam epitaxy. The InAlAs barrier layer lattice-matched to InP on top of the truncated ridges is obtained by the control of the In flux during the growth, otherwise, the composition of InAlAs barrier layer deviates. The PL intensity of InGaAs quantum wires with composition-controlled InAlAs barrier layer is stronger than that of the wires without compositional control. This result indicates that the InGaAs quantum wire structures with good quality are fabricated by the compositional control of the InAlAs barrier layer.
- OSTI ID:
- 536181
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
Similar Records
Room temperature observation of lateral quantization effects in modulated barrier InGaAs/InP wires
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors