Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy
- Chinese Academy of Sciences, Shanghai (China)
The InGaAs/InAlAs/InP material system has recently received much more interest owing to its excellent material properties and extensive applications to both microwave and opto-electronic devices. Device quality InGaAs/InAlAs/InP hetero-structure materials have been grown by GSMBE. Larger conduction band discontinuity and lager electron mobility which led to improved electrical performance of HEMT materials and devices can be obtained by adoption of dual strained InGaAs channel layer and InAlAs Schottky layer. Room temperature and 77K mobilities of 11,839cm{sup 2}/V.s and 60,895cm{sup 2}/V.s with 2DEG densities of 3.73 {times} 10{sup 12} cm{sup {minus}2} and 3.19 {times} 10{sup 12}cm{sup {minus}2} were achieved, respectively, in dual strained InGaAs channel layer and strained InAlAs Schottky layer. Improve performance of InGaAs/InAlAs/InP MSM-PDs has been achieved by adding graded InGaAs/InAlAs superlattice between the InGaAs/InAlAs interface. Low dark current density of 9.75pA/{micro}m2 at 10V bias, high breakdown voltage of >40V at 10{micro}A and fast transient response of 16ps at 5V bias have been obtained.
- OSTI ID:
- 536266
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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