Inverted, substrate-removed MSM and Schottky diode optical detectors
- Electromagnetics and Reliability Directorate, Hanscom AFB, MA (United States). Rome Lab.
- Univ. of Delaware, Newark, DE (United States). Dept. of Electrical Engineering
The electronic and optical design must be considered together to optimize the performance for a given application. For InGaAs detectors on InP substrates, the InP substrate can be selectively removed. Removing the substrate facilitates alignment between the source and detector. An additional benefit is reduced reflection. InGaAs MSM detectors with InAlAs buffer layers result in substantial reduction in reflective losses if the thickness of the InAlAs layer is optimized. A highly reflective Schottky metal is preferred. A new vertical Schottky diode detector was proposed. The new detector uses the initial n{sup +}-InGaAs layer of the epitaxial stack to make a low resistance ohmic contact. Fabrication and testing of the new structure is currently in progress.
- OSTI ID:
- 536208
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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