Properties of InGaAs-MSM-photodetectors on Si
- Technische Univ. Braunschweig (Germany). Inst. fuer Halbleitertechnik
The fabrication and performance of lattice-mismatched and lattice-matched InGaAs-MSM-photodetectors on Si and InP, respectively is described. Both detector types have identical layout and active layer structure. However, because of gas phase transport of Si from the back of the Si substrate, the InGaAs layers grown on Si has an increased residual n-doping level (3 {times} 10{sup 16} cm{sup {minus}3}) with respect to the reference structure on InP (2 {times} 10{sup 15} cm{sup {minus}3}). As a result the MSM devices on Si show a lower responsivity and a longer impulse response, both due to the reduced depletion width. The slightly higher dark current is attributed to defect related carrier generation and tunneling. Despite these limitations which could be overcome by SiO{sub 2}-back-coating of the Si substrate before MOVPE growth the performance of the MSM detectors on Si compare well with lattice-matched as well as lattice-mismatched devices reported in the literature. By reduction of the background doping and the finger spacings of the background doping and the finger spacings of the interdigitated devices the response time can be further improved making these devices attractive for integrated photo receivers combining InGaAs-MSM-detectors with Si amplifying circuitry.
- OSTI ID:
- 536203
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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