High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)
- Bettis Atomic Power Laboratory
High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1% between the active InGaAs cell structure and the InP substrate. 1x1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6% at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6x10{sup {minus}6} A/cm{sup 2}. Jo values as low as 4.1x10{sup {minus}7} A/cm{sup 2} were also observed with a conventional planar cell geometry.
- Research Organization:
- Bettis Atomic Power Lab., West Mifflin, PA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC11-93PN38195
- OSTI ID:
- 756778
- Report Number(s):
- B-T-3208; WAPD-T-3208
- Country of Publication:
- United States
- Language:
- English
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InGaAs monolithic interconnected modules (MIM)
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