Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMT's from 10 Hz to 18 GHz

Journal Article · Sat May 01 00:00:00 EDT 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.210190· OSTI ID:6508608

Plana, R; Escotte, L; Llopis, O; Amine, H; Parra, T; Gayral, M; Graffeuil, J ^[1]

---

1. Univ. Paul Sabatier, Toulouse (France)

Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's (PHEMT's) have been investigated simultaneously in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz) and compared to the noise of more classical devices such as MESFET's and GaAlAs/GaAs HEMT's. Unlike the other commercially available devices, PHEMT's exhibit the unique capability of providing simultaneously state-of-the-art microwave noise performance and a reasonable low-frequency excess noise.

• OSTI ID: 6508608
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:5; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COMPARATIVE EVALUATIONS
ELECTRICAL PROPERTIES
EVALUATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
HETEROJUNCTIONS
HZ RANGE
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MHZ RANGE
NOISE
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS