Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

Journal Article · Thu Jul 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610070158· OSTI ID:21562258

Gladyshev, A G; Nikitina, E V; Denisov, D V; Polyakov, N K; Pirogov, E V; Gorbazevich, A A ^[1]

---

1. Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

• OSTI ID: 21562258
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELECTRON DENSITY
ELECTRON MOBILITY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS
MOBILITY
MOLECULAR BEAM EPITAXY
PARTICLE MOBILITY
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
TRANSISTORS