Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610070158· OSTI ID:21562258

Gladyshev, A G; Nikitina, E V; Denisov, D V; Polyakov, N K; Pirogov, E V; Gorbazevich, A A ^[1]

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1. Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

• OSTI ID: 21562258
• Journal Information: Semiconductors, Vol. 44, Issue 7; Other Information: DOI: 10.1134/S1063782610070158; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DOPED MATERIALS
ELECTRON DENSITY
ELECTRON MOBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PULSES
TRANSISTORS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
MOBILITY
PARTICLE MOBILITY
PNICTIDES
SEMICONDUCTOR DEVICES