Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers
- Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation)
The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
- OSTI ID:
- 22470071
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and {delta}-doped on two sides
Photoluminescence and hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular-beam epitaxy
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics
Journal Article
·
Mon Sep 15 00:00:00 EDT 2008
· Semiconductors
·
OSTI ID:21255615
Photoluminescence and hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular-beam epitaxy
Journal Article
·
Sat May 01 00:00:00 EDT 1993
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:147004
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics
Journal Article
·
Sun Apr 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:22749996