Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics

Journal Article · Sun Apr 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S106378261804022X· OSTI ID:22749996

Zubkov, V. I. ^[1]; Dudin, A. L. ^[2]; Glinskii, G. F. ^[1]

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1. St. Petersburg Electrotechnical University “LETI” (Russian Federation)
2. JSC “Svetlana-Rost” (Russian Federation)

We performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such structures with the same design and different parameters (such as doping level and epitaxial layers width). In the photoluminescence spectra calculations three fitting parameters have been used. These parameters are GaAs/InGaAs valence band offset in strained quantum well, hole quasi Fermi level and inhomogeneous broadening. The PL peaks amplitudes and positions dependencies on the structure parameters were established. These dependencies can be used as the basis for pHEMT structure non-destructive diagnostics.

• OSTI ID: 22749996
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DOPED MATERIALS
FERMI LEVEL
GALLIUM ARSENIDES
INDIUM ARSENIDES
MATRICES
MATRIX ELEMENTS
PHOTOLUMINESCENCE
POISSON EQUATION
SPECTRA