Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization

Journal Article · Fri Nov 28 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4901641· OSTI ID:22402686

Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F. ^[1]; Zvonkov, B. N.; Vikhrova, O. V. ^[2]

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1. Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950 (Russian Federation)
2. Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, N. Novgorod 603950 (Russian Federation)

In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2 μm) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

• OSTI ID: 22402686
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE CARRIERS
CHEMICAL VAPOR DEPOSITION
EFFICIENCY
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
LAYERS
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
RECOMBINATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS