Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

Journal Article · Tue Nov 14 23:00:00 EST 2017 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783417110336· OSTI ID:22771533

Danilov, Yu. A.; Zvonkov, B. N.; Demina, P. B.; Dorokhin, M. V.; Kalentyeva, I. L.; Kudrin, A. V. ^[1]

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1. Lobachevsky State University, Research Institute of Physics and Technology (Russian Federation)

The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of ~0.2%.

• OSTI ID: 22771533
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 11 Vol. 59; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
ELECTROLUMINESCENCE
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
HYSTERESIS
INDIUM ARSENIDES
LAYERS
MAGNETIC FIELDS
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE COMPOUNDS
NONLINEAR PROBLEMS
POLARIZATION
QUANTUM WELLS
SATURATION
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TERNARY ALLOY SYSTEMS