GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

Journal Article · Mon May 01 00:00:00 EDT 2000 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.591437· OSTI ID:20216764

Klem, J F ^[1]; Blum, O ^[1]; Kurtz, S R ^[1]; Fritz, I J ^[1]; Choquette, K D ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 {mu}m, and 2.1 kA/cm2 at 1.21 {mu}m. (c) 2000 American Vacuum Society.

• OSTI ID: 20216764
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 18, Issue 3; Other Information: PBD: May 2000; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
GALLIUM ARSENIDES
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
STRAINS
PHOTOLUMINESCENCE
HETEROJUNCTIONS
ELECTROLUMINESCENCE
THRESHOLD CURRENT
EXPERIMENTAL DATA