Photoluminescence and hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular-beam epitaxy
- Inst. for Micro- and Optoelectronics, Lausanne (Sweden)
Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/In{sub y}Ga{sub l}-{sub y}As/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy were compared. By using these two characterization methods, the influences of the growth temperature T{sub s}, the InGaAs quantum-well channel thickness d{sub ch}, and its indium composition y were studied. interesting correlations were established between their 77 K PL spectra and their transport properties measured either in the dark or under while-light illumination. The PL spectra exhibit one or two bands which are attributed to transitions from electronic states belonging to the first or to the second subband formed in the conductions quantum well, the second transition at higher energy being observed only when the two-dimensional concentration exceeds a critical value n{sub c} which, in the dark, is {approximately} 2.4X10{sup 12} cm{sup {minus}2}(i.e., d{sub ch}{approx}108 {Angstrom}) for the homogeneously doped heterostructures with y=0.25. 27 refs., 10 figs.
- OSTI ID:
- 147004
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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