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Title: Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure

Abstract

Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N{sub s}) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40230757
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 79; Journal Issue: 7; Other Information: DOI: 10.1063/1.1392974; Othernumber: APPLAB000079000007000949000001; 016133APL; PBD: 13 Aug 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; BUFFERS; ELECTRON GAS; ELECTRON MOBILITY; PHOTONS; PHYSICS; SHAPE; SPECTROSCOPY; SUPERLATTICES; TRANSISTORS

Citation Formats

Cheng, Y T, Huang, Y S, Lin, D Y, Tiong, K K, Pollak, Fred H, and Evans, K R. Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure. United States: N. p., 2001. Web. doi:10.1063/1.1392974.
Cheng, Y T, Huang, Y S, Lin, D Y, Tiong, K K, Pollak, Fred H, & Evans, K R. Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure. United States. doi:10.1063/1.1392974.
Cheng, Y T, Huang, Y S, Lin, D Y, Tiong, K K, Pollak, Fred H, and Evans, K R. Mon . "Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure". United States. doi:10.1063/1.1392974.
@article{osti_40230757,
title = {Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure},
author = {Cheng, Y T and Huang, Y S and Lin, D Y and Tiong, K K and Pollak, Fred H and Evans, K R},
abstractNote = {Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N{sub s}) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1392974},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 79,
place = {United States},
year = {2001},
month = {8}
}