Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure

Journal Article · Mon Aug 13 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1392974· OSTI ID:40230757

Cheng, Y T; Huang, Y S; Lin, D Y; Tiong, K K; Pollak, Fred H; Evans, K R

Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N{sub s}) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40230757
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
BUFFERS
ELECTRON GAS
ELECTRON MOBILITY
PHOTONS
PHYSICS
SHAPE
SPECTROSCOPY
SUPERLATTICES
TRANSISTORS