Origin of emitting species in the plasma deposition of a-Si:H alloys

Journal Article · Sun Mar 01 04:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329752· OSTI ID:6583787

Kampas, F J; Griffith, R W

The power dependence of the emission intensities for the species Si, SiH, H, H/sub 2/, and added N/sub 2/ in the rf glow discharge decomposition of silane (SiH/sub 4/) was studied. It was found that H and the emitting excited states of Si and SiH are primary products of the silane decomposition.

• Research Organization: Department of Energy and Environment, Brookhaven National Laboratory, Upton, New York 11973
• OSTI ID: 6583787
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
CHEMICAL REACTIONS
DATA
DECOMPOSITION
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
EMISSION
ENERGY LEVELS
EXCITED STATES
GLOW DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFORMATION
NITROGEN
NONMETALS
PLASMA
RF SYSTEMS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS