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Hydrogen elimination during the glow-discharge deposition of a-Si:H alloys

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.92754· OSTI ID:6128491
;
A model of the deposition of a-Si:H films by silane glow discharge is presented. Three steps are involved: SiH/sub 2/ addition, H/sub 2/ elimination, and cross linking. The model is based upon SiH/sub 2/ gas-phase chemistry and explains the dependence of hydrogen content of a-Si:H upon substrate temperature.
Research Organization:
Department of Energy and Environment, Brookhaven National Laboratory, Upton, New York 11973
DOE Contract Number:
AC02-76CH00016
OSTI ID:
6128491
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:5; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHEMISTRY
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
FLUIDS
GASES
GLOW DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN ADDITIONS
HYDROGEN COMPOUNDS
NONMETALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
STRUCTURAL MODELS
SUBSTRATES
TEMPERATURE DEPENDENCE