Metal-insulator transition in Si:{bold {ital X}} ({bold {ital X}}=P,B): Anomalous response to a magnetic field
Journal Article
·
· Physical Review, B: Condensed Matter
- Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306 (United States)
- Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854 (United States)
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field {ital H} and dopant concentration {ital n} lying on a single universal curve: {sigma}(n,H)/{sigma}(n,0)=G[H{sup {minus}{delta}}{Delta}n] with a magnetic-field crossover exponent {delta}{approx}2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, {Delta}n{sub c}{proportional_to}H{sup {delta}}, is a common feature of uncompensated doped semiconductors. {copyright} {ital 1998} {ital The American Physical Society}
- OSTI ID:
- 657804
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 58; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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