Critical conductivity exponent for Si:B

Journal Article · Mon Apr 08 00:00:00 EDT 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.66.1914· OSTI ID:5844627

Dai, P; Zhang, Y; Sarachik, M P ^[1]

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1. City College of the City University of New York, New York, New York 10031 (US)

We have determined the critical exponent which characterizes the approach of the zero-temperature conductivity to the insulating phase from measurements down to 60 mK of the resistivity of a series of just-metallic uncompensated {ital p}-type Si:B samples with dopant concentrations near the critical concentration for the metal-insulator transition. Our results indicate a critical exponent for Si:B of 0.65{sub {minus}0.14}{sup +0.05}, which is close to the anomalous'' values near 1/2 found for the uncompensated {ital n}-type silicon-based semiconductors Si:P, Si:As, and Si:Sb. This implies that, despite strong spin-orbit scattering, Si:B belongs to the same universality class as other silicon-based systems.

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 5844627
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 66:14; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSOLUTE ZERO TEMPERATURE
ALLOYS
BORON ADDITIONS
BORON ALLOYS
COUPLING
DATA
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
INTERMEDIATE COUPLING
L-S COUPLING
MATERIALS
MEDIUM TEMPERATURE
NUMERICAL DATA
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
ULTRALOW TEMPERATURE