Hopping conduction in doped silicon: The apparent absence of quantum interference

Journal Article · Sun Aug 15 00:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.4875· OSTI ID:6214255

Dai, P; Friedman, J R; Sarachik, M P ^[1]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)

A negative magnetoconductance is found for insulating, uncompensated [ital n]-type Si:P and Si:As, uncompensated [ital p]-type Si:B, and compensated Si:P,B at temperatures between 1.6 and 4.2 K. The positive component expected for quantum interference in the hopping regime is absent or undetectably small in all these Si-based semiconductors even in magnetic fields as small as 200 G.

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 6214255
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:7; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS
PHOSPHORUS ADDITIONS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K