Scaling of the conductivity of Si:B: Anomalous crossover in a magnetic field

Journal Article · Fri Jan 31 23:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.4215· OSTI ID:488760

Bogdanovich, S; Dai, P; Sarachik, M P ^[1]; Dobrosavljevic, V ^[2]; Kotliar, G ^[3]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306 (United States)
3. Serin Physics Laboratory, Rutgers University, Box 849, Piscataway, New Jersey 08854 (United States)

The zero-temperature conductivity of Si:B with dopant concentrations near the metal-insulator transition exhibits scaling as a function of magnetic field with an anomalously large crossover exponent. The large value of {delta} is associated with unusual behavior of the magnetoconductance, which vanishes as a power law approaching the transition. This demonstrates that Si:B, which has an anomalous critical conductivity exponent in zero field, also exhibits unusual behavior in response to a magnetic field. {copyright} {ital 1997} {ital The American Physical Society}

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 488760
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
MAGNETIC FIELDS
MAGNETIC SUSCEPTIBILITY
MAGNETORESISTANCE
PHASE TRANSFORMATIONS
SCALING LAWS
SILICON