Universal scaling of the magnetoconductance of metallic Si:B

Journal Article · Sun Mar 26 23:00:00 EST 1995 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.74.2543· OSTI ID:27867

Bogdanovich, S; Dai, P; Sarachik, M P ^[1]; Dobrosavljevic, V ^[2]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854 (United States)

Conductivity data for Si:B samples with dopant concentrations 1.01{ital n}{sub {ital c}}{lt}{ital n}{lt}1.22{ital n}{sub {ital c}} at temperatures between 0.07 and 0.5 K in magnetic fields from 0 to 9.0 T collapse onto a single universal curve {Delta}{sigma}={ital KT}{sup 1/2}F({ital H}/{ital T}), the form expected for the magnetoconductance due to electron-electron interactions. This suggests that the metal-insulator transition is predominantly driven by electron correlations, and that localization, spin-flip scattering, and spin-orbit scattering are unimportant despite strong spin-orbit effects in Si:B.

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 27867
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 13 Vol. 74; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON ADDITIONS
CORRELATIONS
DOPED MATERIALS
ELECTRON-ELECTRON INTERACTIONS
L-S COUPLING
MAGNETORESISTANCE
SCALING LAWS
SILICON
SPIN FLIP
TEMPERATURE DEPENDENCE