Magnetoconductance of metallic Si:B near the metal-insulator transition
- City College of the City University of New York, New York, New York 10031 (United States)
The magnetoconductance of {ital p}-type Si:B samples with dopant concentrations just above the metal-insulator transition is negative (positive magnetoresistance) at all measured temperatures between 0.1 and 4.2 K and for magnetic fields up to 9 T. We attribute this to the effects of strong spin-orbit scattering associated with the valence bands in {ital p}-type materials. The magnetoconductivity varies as {ital H}{sup 2} in small magnetic fields and approximately as {ital H}{sup 1/2} at high fields, with deviations from this simple form which become increasingly significant as the metal-insulator transition is approached. Based on the assumption that the high-field magnetoconductance is attributable mainly to electron-electron interactions, a separation of the low-field magnetoconductance into components associated with interactions and localization yields a hole inelastic scattering rate {h bar}/{tau}{sub in} which varies approximately linearly with temperature.
- DOE Contract Number:
- FG02-84ER45153
- OSTI ID:
- 7164306
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:11; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
BORON ADDITIONS
BORON ALLOYS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
MAGNETORESISTANCE
MATERIALS
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K