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As-deposited Y-Ba-Cu-O superconducting films on silicon at 400 /sup 0/C

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101462· OSTI ID:6568892
Y-Ba-Cu-O thin films have been grown on silicon at a substrate temperature of 400 /sup 0/C by plasma-assisted laser deposition technique. These films were superconducting in an as-deposited state. Films deposited directly on silicon and films with a MgO buffer layer differed in their superconducting properties. Films with a MgO layer showed higher critical temperatures (70 K) and higher critical currents (3 x 10/sup 3/ A/cm/sup 2/ at 31 K) than films deposited directly on Si. Depth profiling by Auger and x-ray photoelectron spectroscopy has been employed to study the diffusion and structural variation near the interface.
Research Organization:
Institute on Superconductivity, State University of New York at Buffalo, 330 Bonner Hall, Buffalo, New York 14260
OSTI ID:
6568892
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:6; ISSN APPLA
Country of Publication:
United States
Language:
English

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