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Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101489· OSTI ID:6360958

Y-Ba-Cu-O films were deposited on Al-coated Si substrates by the plasma-spray method. The Al buffer layer appears to be effective in yielding crack-free adhesive Y-Ba-Cu-O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x-ray microanalysis and x-ray photoelectron spectroscopy confirm that the Al buffer forms an Al/sub 2/O/sub 3/ layer and prevents precipitation of Cu at the film/substrate interface.

Research Organization:
Microelectronics Laboratory, Santa Clara University, Santa Clara, California 95053
OSTI ID:
6360958
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:13; ISSN APPLA
Country of Publication:
United States
Language:
English

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